Method of fabricating thin film transistor

Details Method of fabricating thin film transistor Method of fabricating thin film transistor

2008-05-27

2008-05-27

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE51005

Reexamination Certificate

active

11467940

ABSTRACT:
A method for fabricating a thin film transistor is provided. A conductive layer is formed on a substrate. A patterned mask is formed on the conductive layer to cover a predetermined thin film transistor (TFT) area, and at least one portion of the conductive layer exposed by the patterned mask are removed. A laser is applied to form a laser hole in the patterned mask to expose a portion of the conductive layer and the laser hole substantially corresponds to a channel region of the predetermined TFT area. The exposed conductive layer is etched to form source and drain electrodes on opposite sides of the channel region.

REFERENCES:
patent: 5529951 (1996-06-01), Noguchi et al.
patent: 7135360 (2006-11-01), Chae et al.
patent: 7229862 (2007-06-01), Yamazaki et al.

Affiliated with

Also associated with

Rating

Method of fabricating thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3952662