Method of fabricating thin film transistor

Details Method of fabricating thin film transistor Method of fabricating thin film transistor

2007-08-14

2007-08-14

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S486000

Reexamination Certificate

active

11015745

ABSTRACT:
A method of fabricating a thin film transistor includes preparing an insulating substrate; forming a first amorphous silicon layer on the substrate; forming a diffusion barrier layer pattern on the first amorphous silicon layer; forming a second amorphous silicon layer over the whole surface of the substrate; forming a metal silicide layer on the second amorphous silicide layer; and heat-treating the substrate to form first and second polysilicon layers.

REFERENCES:
patent: 5619044 (1997-04-01), Makita et al.
patent: 6670224 (2003-12-01), Lee et al.
patent: 6784034 (2004-08-01), Choi
patent: 6787433 (2004-09-01), Mitani et al.
patent: 6812081 (2004-11-01), Yamazaki et al.

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