Method of fabricating thin film transistor

Details Method of fabricating thin film transistor Method of fabricating thin film transistor

2007-08-07

2007-08-07

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S166000, C257SE21421

Reexamination Certificate

active

11206923

ABSTRACT:
A method of fabricating a thin film transistor is provided. The method comprises first preparing a substrate and forming an amorphous silicon layer on the substrate. A catalyst construction is then positioned on the amorphous silicon layer and an anode and a cathode are then connected to the catalyst construction. A predetermined amount of electric power is then delivered to the anode and the cathode, generating joule heat which then crystallizes the portion of the amorphous silicon layer on which the catalyst construction is positioned, thereby forming a polysilicon layer. The remaining portion of the amorphous silicon layer is then crystallized to a polysilicon layer by propagating the crystallization of the portions of the polysilicon layer on which the catalyst construction is positioned.

REFERENCES:
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patent: 6607949 (2003-08-01), Kim et al.
patent: 6849525 (2005-02-01), Kim et al.
patent: 2000-0031708 (2000-06-01), None
Patent Abstracts of Korea for Publication No. 1020000031708 A; Date of publication of application Jun. 5, 2000, in the name of Jae Beom Choi et al.

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