Method of fabricating thin film transistor

Details Method of fabricating thin film transistor Method of fabricating thin film transistor

1991-12-23

1993-04-13

Quach, T. N.

Fishing, trapping, and vermin destroying

437194, 437197, 437236, H01L 21335, H01L 21311

Patent

active

052022749

ABSTRACT:
A method of fabricating a thin film transistor wherein electrode wirings and an insulating layer are fabricated by depositing on a substrate an aluminum alloy layer to become electrode wiring. An Al.sub.2 O.sub.3 layer having a given thickness is then formed by a first anodization of the aluminum alloy layer. Photoresist patterns are then formed that correspond to the electrode wirings on the Al.sub.2 O.sub.3 layer so as to pattern the aluminum alloy layer. The Al.sub.2 O.sub.3 and aluminum alloy layer is then dry-etched to a predetermined depth using the photoresist patterns as a mask. A second anodization is carried out to form the Al.sub.2 O.sub.3 layer up to the surface of the substrate between the electrode wirings, using the photoresist patterns as a mask, whereby the new anodized Al.sub.2 O.sub.3 layer is used as an insulating layer of the electrode wirings.

REFERENCES:
patent: 4001871 (1977-01-01), Tsunemitsu
patent: 4421785 (1983-12-01), Kroger
"Silicon Processing for the VLSI Era"; vol. 1: Process Technology; Stanley Wolf Ph.D.; Richard N. Tauber Ph.D.; Lattice Press, Calif.

Affiliated with

Also associated with

Rating

Method of fabricating thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1155037