Method of fabricating thin film piezoelectric device

Details Method of fabricating thin film piezoelectric device Method of fabricating thin film piezoelectric device

1996-01-31

1998-09-01

Tsai, Jey

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438 53, H01L 2100

Patent

active

058010696

ABSTRACT:
A method of fabricating a thin film piezoelectric device includes preparing a semiconductor substrate having a surface; forming an etch stopping layer having an etching rate on the surface of the semiconductor substrate; forming a first semiconductor layer having an etching rate higher than the etching rate of the etch stopping layer on the etch stopping layer; forming a first electrode on a region of the first semiconductor layer; forming a piezoelectric film on the first electrode; forming a second electrode on the piezoelectric film; and etching a portion of the first semiconductor layer where the first electrode, the piezoelectric film, and the second electrode overlap, from the surface of the first semiconductor layer, selectively with respect to the etch stopping layer, thereby forming a cavity in the first semiconductor layer. Even when a compound semiconductor is employed as the substrate, the etching forming a cavity is stopped at the etch stopping layer in the direction perpendicular to the surface of the first semiconductor layer so that a cavity having a uniform depth is produced with high controllability.

REFERENCES:
patent: 5202281 (1993-04-01), Ishibashi
patent: 5395802 (1995-03-01), Kiyota et al.
patent: 5493470 (1996-02-01), Zavracky et al.
"X-Band Thin Film Acoustic Filters on GaAs" by R.B. Stokes and J.D. Crawford in the 1992 IEEE MTT-S International Microwave Symposium Digest, vol. 1 (edited by D.W. Reid), pp. 157-160.

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