Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-03-08
2011-03-08
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S706000, C438S780000, C257SE21170, C257SE21007, C257SE21051, C257SE21077, C257SE21134, C257SE21229, C257SE21245, C257SE21250, C257SE21252, C257SE21266, C257SE21293
Reexamination Certificate
active
07902001
ABSTRACT:
Provided is a sacrifice layer formed on a first substrate. A thin film laminated body is formed on the sacrifice layer. A separation groove exposing the sacrifice layer is formed to divide the thin film laminated body into at least one thin film device. The sacrifice layer is partially removed using a dry etching process. After the partial removal of the sacrifice layer, a remaining sacrifice layer region maintains the thin film device on the first substrate. A supporting structure is temporarily joined to the thin film device. The thin film device joined to the supporting structure is separated from the first substrate. Then, the remaining sacrifice layer is removed. The thin film device joined to the supporting structure is joined to a second substrate. Finally, the supporting structure is separated from the thin film device.
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Korean Office Action, w/ English translation thereof, issued in Korean Patent Application No. KR 10-2008-0112955 dated Aug. 25, 2010.
Kim Sang Jin
Lee Hwan-Soo
Oh Yong-soo
McDermott Will & Emery LLP
Nhu David
Samsung Electro-Mechanics Co. Ltd.
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