Method of fabricating T-gate

Details Method of fabricating T-gate Method of fabricating T-gate

2011-03-29

2011-03-29

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S579000, C438S574000, C257SE21205

Reexamination Certificate

active

07915106

ABSTRACT:
A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.

REFERENCES:
patent: 6255202 (2001-07-01), Lyons et al.
patent: 6403456 (2002-06-01), Plat et al.
patent: 6524937 (2003-02-01), Cheng et al.
patent: 6740535 (2004-05-01), Singh et al.
patent: 6780694 (2004-08-01), Doris et al.
patent: 6943068 (2005-09-01), Chang et al.
patent: 7008832 (2006-03-01), Subramanian et al.
patent: 2006/0105531 (2006-05-01), Huh
patent: 11-288950 (1999-10-01), None
patent: 2001-053083 (2001-02-01), None
patent: 1019950005489 (1995-05-01), None
patent: 1019970011618 (1997-12-01), None
patent: 100141340 (1998-03-01), None
patent: 1020030064958 (2003-08-01), None
patent: 10-0592765 (2006-06-01), None

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