Method of fabricating suspended structure

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C438S689000

Reexamination Certificate

active

07410821

ABSTRACT:
A substrate having a sacrificial layer and a structural layer disposed on the front surface of the substrate is provided. Thereon an opening is formed on the back surface of the substrate and the sacrificial layer is exposed partially. A wet etching process is performed to etch the sacrificial layer via the opening to form a suspended structure. Finally, a gas injection process is performed. The gas injection process comprises blowing a gas on the suspended structure via the opening and consequently preventing the suspended structure from sticking to the substrate.

REFERENCES:
patent: 6816301 (2004-11-01), Schiller

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