Method of fabricating submicron silicon structures such as perme

Details Method of fabricating submicron silicon structures such as perme Method of fabricating submicron silicon structures such as perme

1982-12-09

1985-04-09

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576W, 29580, 148187, 156647, 156648, 156651, 156653, 156657, 1566591, 156662, 357 15, 427 84, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

045100160

ABSTRACT:
Submicron silicon structures are fabricated by repeat oxidation and stripping the walls of a U-groove leaving thin silicon fingers.
This method may be used to fabricate a silicon transistor having an emitter and a collector separated by a channel. The channel is formed in a silicon finger by a Schottky base, which at zero bias pinches off conduction of the channel. A bias voltage on the Schottky base causes conduction. The channel has a very short length making the transistor capable of high frequency operation.

REFERENCES:
Bozler et al., Fabrication and Numerical Simulation of the Permeable Base Transistor, IEEE Transactions on Electron Devices, vol. Ed-27, No. 6, Jun. 1980, pp. 1128-1141.
Snyder et al., Evaluation of the Permeable Base Transistor for Application in Silicon Integrated Logic Circuits, Technical Digest of IEEE International Electron Device Meeting, 1981, pp. 612-615.
IEEE International Electron Device Meeting, Dec. 1982, Silicon Permeable Base Transistors Fabricated with a New Submicron Technique, J. Y. Chi et al.

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