Method of fabricating submicron FETs with low temperature group

Details Method of fabricating submicron FETs with low temperature group Method of fabricating submicron FETs with low temperature group

1997-05-23

1999-08-10

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438604, H01L 2120

Patent

active

059372850

ABSTRACT:
A method of fabricating submicron HFETs includes forming a buffered substrate structure with a supporting substrate of GaAs, a portion of low temperature AlGaAs grown on the supporting substrate at a temperature of approximately 300.degree. C., a layer of low temperature GaAs grown on the portion AlGaAs layer at a temperature of 200.degree. C., a layer of low temperature AlGaAs grown on the GaAs layer at a temperature of 400.degree. C., and a buffer layer of undoped GaAs grown on the second AlGaAs layer. Complementary pairs of HFETs can be formed on the buffered substrate structure, since the structure supports the operation of p and n type transistors equally well.

REFERENCES:
patent: 5403775 (1995-04-01), Holonyak, Jr. et al.
patent: 5872031 (1999-02-01), Mishra et al.

Affiliated with

Also associated with

Rating

Method of fabricating submicron FETs with low temperature group does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating submicron FETs with low temperature group , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating submicron FETs with low temperature group will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1130081