Method of fabricating sub-half-micron-size gates on semiconducto

Details Method of fabricating sub-half-micron-size gates on semiconducto Method of fabricating sub-half-micron-size gates on semiconducto

1984-01-06

1985-06-25

Kitta, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430315, 430317, 430318, 430323, 430324, 430329, 430312, G03C 500

Patent

active

045254486

ABSTRACT:
A method of fabricating a very small-size gate on a semiconductor substrate includes covering the substrate with a photoresist layer, masking an area of the photoresist layer that has a size exceeding the desired size of the gate, subjecting the photoresist layer to overexposure so that the size of the unaffected area is reduced to the desired size, removing the overexposed region of the photoresist layer, providing a protective coating on such region, clearing the unaffected photoresist material out of the area occupied thereby, and depositing gate material at least in the thus obtained recess. The gate material may be deposited over the protective coating, in which case the zone at which the gate is to remain is protected by unexposed photoresist material and the remainder of the gate material is removed from the protective coating. In the alternative, an additional photoresist layer is deposited over the protective coating and is exposed only at the zone of the recess, whereupon the exposed photoresist is removed and the metallic gate material is applied over the unexposed photoresist left behind, as well as into the zone vacated by the exposed photoresist of the additional layer. Then, the gate material and the unexposed additional photoresist layer are removed, leaving the gate behind. In each instance, the protective coating is also removed.

REFERENCES:
patent: 3849136 (1974-11-01), Grebe
patent: 4265934 (1981-05-01), Ladd, Jr.
Chao et al., Conference: International Electron Devices Meeting. Washington, D.C., USA (Dec. 7-9, 1981), pp. 92-95.

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