Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-11-01
2005-11-01
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S689000, C438S706000, C438S709000, C438S718000
Reexamination Certificate
active
06960526
ABSTRACT:
A method of producing a field emission device includes laying a group III-nitride semiconductor layer over a substrate, placing a photoresist mask over the group III-nitride semiconductor layer, patterning a generally circular grid in the photoresist mask and the group III-nitride semiconductor layer, and forming the group III-nitride semiconductor layer into generally pointed tips using an inductively coupled plasma dry etching process, wherein the group III-nitride semiconductor layer comprises a group III-nitride semiconductor material having a low positive electron affinity or a even a negative electron affinity, wherein the inductively coupled plasma dry etching process selectively creates an anisotropic deep etch in the group III-nitride semiconductor layer, and wherein the inductively coupled plasma dry etching process creates an isotropic etch in the group III-nitride semiconductor layer. Preferably, the photoresist layer is approximately 1.7 microns in thickness, and the fabricated tips have a radius of curvature of less than 100 nanometers.
REFERENCES:
patent: 5536193 (1996-07-01), Kumar
patent: 5713775 (1998-02-01), Geis et al.
patent: 5990604 (1999-11-01), Geis et al.
patent: 6113451 (2000-09-01), Hobart et al.
patent: 6218771 (2001-04-01), Berishev et al.
patent: 6376339 (2002-04-01), Linthicum et al.
patent: 6462355 (2002-10-01), Linthicum et al.
patent: 2004/0189173 (2004-09-01), Chowdhury et al.
patent: 2005/0007670 (2005-01-01), Jiang et al.
Sowers, et al., “Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications,” Appl. Phys. Lett., Oct. 20, 1997, pp. 2289-2291, vol. 71, No. 16.
Zheleva, et al., “Dislocation density reduction via lateral epitaxy in selectively grown GaN structures,” Appl. Phys. Lett., Oct. 27, 1997, pp. 2472-2474, vol. 71, No. 17.
Underwood, et al., “GaN field emitter array diode with integrated anode”, J. Vac. Sci. Technol. B., Mar./Apr. 1998, pp. 822-825, vol. 16, No. 2.
Kozawa, et al., “Field emission study of gated GaN and Al0.1Ga0.9N/GaN pyramidal field emitter arrays,” Appl. Phys. Lett., Nov. 22, 1999, pp. 3330-3332, vol. 75, No. 21.
Kuball, et al., “Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and Their Optical Characterization by Micro-Photoluminescence/Raman Mapping,” MRS Interent J. Nitride Semicond. Res., 2000, vol. 5S1 , Art. W12.3.
Günther, et al., “Comparison of field emission from diamond and AIN coated Si Tips,” EURO FE. Sep. 25-29, 2000, Segovia-Spain.
Kasu, et al., “Spontaneous ridge-structure formation and large field emission of heavily Si-doped AIN,” Appl. Phys. Lett., Mar. 26, 2001, pp. 1835-1837, vol. 78, No. 13.
Sugino, et al., “Field emission from GaN surfaces roughened by hydrogen plasma treatment,” Appl. Phys. Lett., May 21, 2001, pp. 3229-3231, vol. 78, No. 21.
Kasu, et al., “Field-emission characteristics and large current density of heavily Si-doped AIN and AlxGa1-xN (0.38 ≲×< 1),” Appl. Phys. Lett., Nov. 26, 2001, pp. 3642-3644, vol. 79, No. 22.
Tondare, et al., “Field emission from open ended aluminum nitride nanotubes,” Appl. Phys. Lett., Jun. 24, 2002, pp. 4813-4815, vol. 80, No. 25.
She, et al., “Silicon tip arrays with ultrathin amorphous diamond apexes,” Appl. Phys. Lett., Nov. 25, 2002, pp. 4257-4259, vol. 81, No. 22.
Nguyen Thanh
Stolarun Edward L.
The United States of America as represented by the Secretary of
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