Method of fabricating strained Si SOI wafers

Details Method of fabricating strained Si SOI wafers Method of fabricating strained Si SOI wafers

2005-12-06

2005-12-06

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S479000, C438S766000

Reexamination Certificate

active

06972247

ABSTRACT:
A method of fabricating a strained semiconductor-on-insulator (SSOI) substrate in which the strained semiconductor is a thin semiconductor layer having a thickness of less than 50 nm that is located directly atop an insulator layer of a preformed silicon-on-insulator substrate is provided. Wafer bonding is not employed in forming the SSOI substrate of the present invention.

REFERENCES:
patent: 6774015 (2004-08-01), Cohen et al.
patent: 6825102 (2004-11-01), Bedell et al.

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