Method of fabricating storage capacitor in semiconductor...

Details Method of fabricating storage capacitor in semiconductor... Method of fabricating storage capacitor in semiconductor...

2005-06-28

2005-06-28

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S386000, C438S602000, C438S640000, C438S669000, C438S672000, C438S756000, C438S757000

Reexamination Certificate

active

06911372

ABSTRACT:
A storage capacitor has a double cylinder type structure, with a small cylinder in a lower part thereof and a cylindrical lower electrode structure disposed on the cylindrical contact plug. A method of fabricating the storage capacitor includes: forming a contact hole for exposing an activation region of a transistor; depositing a conductive film to form within the contact hole a contact plug of the storage capacitor having a void therein; opening an upper part of the void of the contact plug; and covering a surface of the device with material to form the storage capacitor electrode, to obtain the storage capacitor electrode having a double cylindrical structure.

REFERENCES:
patent: 5811331 (1998-09-01), Ying et al.
patent: 5861671 (1999-01-01), Tsai et al.
Quirk et al., Semiconductor Manufacturing Technology (2001), Prentice Hall, pp. 457-459.

Affiliated with

Also associated with

Rating

Method of fabricating storage capacitor in semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating storage capacitor in semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating storage capacitor in semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3506467