Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-08-25
2000-03-14
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438152, 438459, H01C 7100
Patent
active
060371986
ABSTRACT:
The present invention is to fabricate SOI wafer whose the silicon layer is very uniform and the impurity concentration is low. The insulating layer, that is, a composite layer of SiO2 and silicon, is grown on oxide substrate by means of a molecular beam epitaxy fabricating method using silicon as an original material in the oxygen atmosphere. The composite layer of the oxide and silicon is grown according to gradual decreasing the pressure of oxygen atmosphere. A top silicon layer of uniform thickness is grown by means of a molecular beam epitaxy fabricating method using only silicon material consecutively on the composite layer.
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Lee Seong Jae
Oh Sang Chul
Park Kyoung Wan
Park Moon Ho
Shin Min Cheol
Electronics and Telecommunications Research Institute
Lebentritt Michael S.
Niebling John F.
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