Method of fabricating SOI substrate

Details Method of fabricating SOI substrate Method of fabricating SOI substrate

1998-02-12

2000-06-13

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

H01L 2176

Patent

active

060749288

ABSTRACT:
An oxygen ion is implanted into a silicon substrate at a dose of 3.times.10.sup.17 (cm.sup.-2) or lower. Then, the silicon substrate is heated at 1250.degree. C. or lower for 40 minute or longer. And the silicon substrate is heated at 1300.degree. C. or higher in an inert gas atmosphere. Further, the silicon substrate is heated at 1300.degree. C. or higher in an atmosphere containing an oxygen gas in an amount of 1% by volume or more.

REFERENCES:
patent: 5258318 (1993-11-01), Buti et al.
Nakashima, Sadao et al., "Analysis of buried oxide layer formation and mechanism of threading dislocation generation in the substoichiometric oxygen dose region", J. Mater. Res., vol. 8, No. 3, Mar. 1993, pp. 523-534 .

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