Method of fabricating small dimension wires

Details Method of fabricating small dimension wires Method of fabricating small dimension wires

1998-11-09

2000-11-21

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438652, H01L 2144

Patent

active

061502634

ABSTRACT:
A method of forming small dimension wires by an isotropic removal process. The method provides a substrate with an insulation layer. A first conductive layer and a second conductive layer are formed on the insulation layer. A wire pattern is formed on a photoresist layer after the coating process and the sequential exposure and development process. Part of the second conductive layer is removed by using the wire pattern on the photoresist layer as a mask, and thus part of the second conductive layer with wires is remained. Isotropic etching the peripheral part of the second conductive layer and thus the part of wire pattern with a smaller dimension is remained. Using the wire pattern with a smaller dimension as a mask to anisotropic etch the first conductive layer until the surface of the insulation layer is exposed, and thus the process of fabricating small dimension is finished.

REFERENCES:
patent: 5776821 (1998-07-01), Haskell et al.
patent: 5902133 (1999-05-01), Linliu
patent: 6010829 (2000-01-01), Rogers et al.

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