Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-11-10
2008-07-22
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S164000, C438S458000, C438S459000, C438S479000, C257SE51032
Reexamination Certificate
active
07402465
ABSTRACT:
A method for forming a single-crystal silicon film of high quality is provided. The method includes the operations of: growing single-crystal silicon to a predetermined thickness of a crystal growth plate; depositing a buffer layer on the single-crystal silicon layer; forming a partition layer at a predetermined depth in the single-crystal silicon layer by implanting hydrogen ions in the single-crystal silicon layer from an upper portion of an insulating layer; attaching a substrate onto the buffer layer; and cutting the partition layer of the single-crystal silicon layer by heating the partition layer from the crystal growth plate to obtain a single-crystal silicon layer of a predetermined thickness on the substrate.
REFERENCES:
patent: 4509990 (1985-04-01), Vasudev
patent: 5374564 (1994-12-01), Bruel
patent: 6528387 (2003-03-01), Moriyasu et al.
patent: 6768175 (2004-07-01), Morishita et al.
patent: 2002/0151120 (2002-10-01), Yamazaki et al.
Noguchi Takashi
Xianyu Wenxu
Buchanan & Ingersoll & Rooney PC
Trinh Michael
LandOfFree
Method of fabricating single-crystal silicon film and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating single-crystal silicon film and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating single-crystal silicon film and method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3967071