Method of fabricating silicon single crystals

Details Method of fabricating silicon single crystals Method of fabricating silicon single crystals

1997-11-21

1999-10-19

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 15, C30B 1520

Patent

active

059682620

ABSTRACT:
When the pulling speed is V(mm/min), the temperature gradient along the crystal axis within the temperature range from the melting point of silicon to 1300.degree. C. is G1 (.degree. C./mm), the temperature gradient along the crystal axis within the temperature range from 1150.degree. to 1080.degree. C. is G2 (.degree. C./mm), and the octahedral-shaped void density is d (pieces/cm.sup.3), crystals are grown under a condition satisfying:

REFERENCES:
patent: 5728211 (1998-03-01), Takano et al.
patent: 5817171 (1998-10-01), Sakurada et al.

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