Method of fabricating silicon-on-insulator substrate

Details Method of fabricating silicon-on-insulator substrate Method of fabricating silicon-on-insulator substrate

1996-12-26

1999-05-25

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438410, 438692, H01L 2176

Patent

active

059077832

ABSTRACT:
A method of fabricating a SOI substrate is disclosed, which includes the steps of: forming trenches in the Si substrate; forming an oxidation preventing film over the Si substrate and at the side-walls of the trenches; forming grooves at the bottoms of trenches by etching the Si substrate using the oxidation preventing film as a mask; carrying out an oxidation using to form an oxide film and a Si device layer isolated by the oxide film; removing the oxidation preventing film; and carrying out a planarization to form the silicon-on-insulator substrate having a planar surface.

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