Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Patent
1997-02-21
1998-07-07
Niebling, John
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
117 44, H01L 2120
Patent
active
057768188
ABSTRACT:
A method of fabricating a silicon structure including forming an insulating layer having an opening on single crystal semiconductor substrate; forming a polycrystalline semiconductor layer on the insulating layer and within the opening in the insulating lating layer; forming an anti-reflective film at spaced apart positions on the polycrystalline semiconductor layer spaced from the opening in the insulating layer by a substantially uniform distance; melting the polycrystalline semiconductor layer by laser irradiation and recrystallizing the polycrystalline semi-conductor layer into a single crystal layer including a quasi-grain boundary; and selectively implanting dopant impurities into the portion of the single crystal layer including the quasi-grain boundary.
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Mee Brendan
Mitsubishi Denki & Kabushiki Kaisha
Niebling John
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