Method of fabricating silicon nitride layer and method of...

Details Method of fabricating silicon nitride layer and method of... Method of fabricating silicon nitride layer and method of...

2005-09-22

2009-06-09

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S597000, C438S605000, C438S687000, C438S707000, C438S708000, C257SE21051, C257SE21091, C257SE21209, C257SE21226, C257SE21579, C257SE29306

Reexamination Certificate

active

07544603

ABSTRACT:
A method of fabricating a silicon nitride layer is described. First, a substrate is provided. Then, a silicon nitride layer is formed on the substrate. The silicon nitride layer is UV-cured in an atmosphere lower than the standard atmospheric pressure. Through the UV curing treatment, the tensile stress of the silicon nitride layer is increased.

REFERENCES:
patent: 4840876 (1989-06-01), Arai
patent: 5029130 (1991-07-01), Yeh
patent: 5468662 (1995-11-01), Havemann
patent: 5470799 (1995-11-01), Itoh et al.
patent: 5927992 (1999-07-01), Hodges et al.
patent: 5994192 (1999-11-01), Chen
patent: 6319809 (2001-11-01), Chang et al.
patent: 6548899 (2003-04-01), Ross
patent: 6995506 (2006-02-01), Ogawa
patent: 7064414 (2006-06-01), Aitken et al.
patent: 7094713 (2006-08-01), Niu et al.
patent: 7102722 (2006-09-01), Kim et al.
patent: 7259110 (2007-08-01), Ohnuma et al.
patent: 7348063 (2008-03-01), Yamada et al.
patent: 2005/0042889 (2005-02-01), Lee et al.
patent: 1336688 (2002-02-01), None
patent: 1185022 (2008-06-01), None
patent: 63-239822 (1988-10-01), None

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