Method of fabricating silicon devices on sapphire with wafer...

Details Method of fabricating silicon devices on sapphire with wafer... Method of fabricating silicon devices on sapphire with wafer...

2005-06-28

2005-06-28

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S118000, C438S458000

Reexamination Certificate

active

06911375

ABSTRACT:
Described is a method for making silicon on sapphire structures, and devices therefrom. The inventive method of forming integrated circuits on a sapphire substrate comprises the steps of providing a device layer on an oxide layer of a temporary substrate; bonding the device layer to a handling substrate; removing the temporary substrate to provide a structure containing the device layer between the oxide layer and the handling substrate; bonding a sapphire substrate to the oxide layer; removing the handling substrate from the structure; and annealing the final structure to provide a substrate comprising the oxide layer between the device layer and the sapphire substrate. The sapphire substrate may comprise bulk sapphire or may be a conventional substrate material with an uppermost sapphire layer.

REFERENCES:
patent: 5455202 (1995-10-01), Malloy et al.
patent: 6383890 (2002-05-01), Takisawa et al.
patent: 6686630 (2004-02-01), Hanafi et al.
patent: 6774010 (2004-08-01), Chu et al.

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