Method of fabricating silicon-based MEMS devices

Details Method of fabricating silicon-based MEMS devices Method of fabricating silicon-based MEMS devices

2006-12-05

2006-12-05

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S052000, C438S053000

Reexamination Certificate

active

07144750

ABSTRACT:
A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100 Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100 Mpa.

REFERENCES:
patent: 5620931 (1997-04-01), Tsang et al.
patent: 5672449 (1997-09-01), Loschner et al.
patent: 5922212 (1999-07-01), Kano et al.
patent: 6605319 (2003-08-01), Chinn et al.
Orphana M. et al: “Control of residual stress of polysilicon thin films by heavy doping in surface micromachining”, Jun. 24-37, 1991, pp. 957-960, IEEE New York, ISBN 0-87942-585-7.
Scheiter T. et al: “Rapid Thermal Annealing of Doped Silicon Films to Relax Intrinsic Stress”, Sensors and Materials, Scientific Publishing Division of MYU, Tokyo, JP, vol. 8 No. 7, 1996, pp. 445-454, ISSN: 0914-4935.
Furtsch M. et al: “Influence of Anneals in Oxygen Ambient on Stress of Thick Polysilicon Layers”, Aug. 30, 1999, Sensors and Actuators A, Elsevier Sequoia S.A., Lausanne, CH. vol 76, No. 1-3, pp. 335-342, ISSN: 0924-4247.
Gennissen PTJ et al: “Bipolar-compatible epitaxial poly for smart sensors: stress minimization and applications”, Jul. 1997, Sensors and Acutators A, Elsevier Sequoia S.A., Lausanne, CH. vol 62, No. 1-3, pp. 636-645, ISSN: 0924-4247.
Alley R L et al: “The Effect of Release-Etch Processing on Surface Microstructure Stiction”, Jun. 1992, Solid-State Sensor and Actuator Workshop, 5th Technical Digest, IEEE Hilton Head Island, IEEE, pp. 202-207, ISBN: 0-7803-0456-X.

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