Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-09-20
2005-09-20
Smith, Matthew (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S423000, C438S766000, C438S484000
Reexamination Certificate
active
06946358
ABSTRACT:
The present invention provides a cost effective and simple method of forming isolation regions, such as shallow trench isolation regions, in a semiconductor substrate that avoids etching into the trench. In the present invention, the isolation regions are formed by utilizing a selective ion implantation process that creates an oxygen implant region near the upper surface of the substrate. Upon a subsequent anneal step, the oxygen implant region is converted into an isolation region that has an upper surface that is substantially coplanar with the upper surface of the substrate.
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Doris Bruce B.
Hakey Mark C.
Sekiguchi Akihisa
Abate Esq. Joseph P.
International Business Machines - Corporation
Luu Chuong Anh
Scully Scott Murphy & Presser
Smith Matthew
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