Method of fabricating semiconductor substrate having very shallo

Details Method of fabricating semiconductor substrate having very shallo Method of fabricating semiconductor substrate having very shallo

1991-12-23

1993-12-14

Fourson, George

Fishing, trapping, and vermin destroying

437950, 437 16, H01C 21265

Patent

active

052702502

ABSTRACT:
A method of fabricating a semiconductor substrate is characterized in that a semiconductor wafer is disposed between a pair of opposite electrodes provided in an atmosphere of inert gas containing impurity gas which is held at a low pressure, a low-frequency alternating current is applied between the electrodes to induce plasma, and impurity ions are implanted into the surface of the semiconductor wafer to form a very shallow impurity diffusion layer.

REFERENCES:
patent: 4861729 (1989-08-01), Fuse et al.
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 4937205 (1990-06-01), Nakayama et al.
patent: 5019886 (1991-05-01), Sato et al.

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