Method of fabricating semiconductor optical device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C257S098000, C372S043010, C385S144000

Reexamination Certificate

active

07378292

ABSTRACT:
Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.

REFERENCES:
patent: 6236794 (2001-05-01), Mallecot et al.
patent: 6239490 (2001-05-01), Yamada et al.
patent: 6815736 (2004-11-01), Mascarenhas
‘Monolithically Integrated Semiconductor LED-Amplifier for Applications as Transceivers in Fiber Access Systems’ Liou et al., IEEE Photonics Technology Letters, vol. 8, No. 6, Jun. 1996, pp. 800-802.
‘Monolithic series-connected 1.55 μm segmented-ridge lasers’ Getty et al., Electronic Letters, vol. 35, No. 15, Jul. 1999, pp. 1257-1258.

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