Method of fabricating semiconductor laser

Details Method of fabricating semiconductor laser Method of fabricating semiconductor laser

1991-07-25

1993-07-13

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437129, 148DIG95, 156625, H01L 21306

Patent

active

052270157

ABSTRACT:
An n-InP buffer layer 102, an InGaAsP active layer 103, a p-InP cladding layer 104 and a p-InGaAsP surface protective layer 105 are successively epitaxially grown on an n-InP substrate 101 having a (100) plane as a main plane. An etching mask 106, an insulating film, is formed in a stripe in the <011> direction by photolithography and dry etching. Using a solution comprising a mixture of hydrochloric acid, oxygenated water and acetic acid, the n-InP buffer layer 102 is etched to a depth lower than the p-InP cladding layer 103, to form a mesa stripe 107. Next, the insulating film 106 is removed and the p-InGaAsP surface protective layer 105 is removed using a solution comprising a mixture of sulfuric acid and oxygenated water. Thereafter, InP current blocking layers 108 and 109 are selectively formed at the regions other than the mesa stripe 107 by the liquid-phase epitaxial growth. Thus, a buried heterostructure semiconductor laser is fabricated, having good laser characteristics and a high reliability.

REFERENCES:
patent: 4984244 (1991-01-01), Yamamoto et al.
patent: 4994142 (1991-02-01), Appelbaum
patent: 5019519 (1991-05-01), Tanaka et al.
patent: 5075239 (1991-12-01), Tegude
patent: 5093278 (1992-03-01), Kamei
"Technical Research Report" OQE85-8, pp. 55-58 (1985).

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