Method of fabricating semiconductor integrated circuit device

Details Method of fabricating semiconductor integrated circuit device Method of fabricating semiconductor integrated circuit device

2009-06-26

2011-10-11

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S199000, C257SE21199, C257SE21438

Reexamination Certificate

active

08034715

ABSTRACT:
A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

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