Method of fabricating semiconductor devices with a passivated su

Details Method of fabricating semiconductor devices with a passivated su Method of fabricating semiconductor devices with a passivated su

1995-11-13

1998-02-17

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438739, 438606, 438167, H01L 2144

Patent

active

057190887

ABSTRACT:
A method of fabricating semiconductor devices with a passivated surface includes providing a contact layer on a substrate so as to define an inter-electrode surface area. A first layer and an insulating layer, which are selectively etchable relative to each other and to the substrate and the contact layer, are deposited on the contact layer and the inter-electrode surface area. The insulating layer and the first layer are individually and selectively etched to define an electrode contact area and to expose the inter-electrode surface area. The exposed inter-electrode surface area is passivated, either subsequent to or during the etching of the first layer. A metal contact is formed in the electrode contact area in abutting engagement with the insulating layer so as to seal the inter-electrode surface area.

REFERENCES:
patent: 5389574 (1995-02-01), Mizunuma
W.C. Simpson, et al. "Soft X-ray photoelectron spectroscopy study of the reaction of XeF.sub.2 with GaAs" J.Vac. Sci. Technol. A 13(3) (May 1 Jun. 1995) pp. 1709-1713.

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