Method of fabricating semiconductor devices by crystallizing amo

Details Method of fabricating semiconductor devices by crystallizing amo Method of fabricating semiconductor devices by crystallizing amo

1996-12-02

1999-10-12

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438163, H01L 2904

Patent

active

059665963

ABSTRACT:
Method of fabricating TFTs (thin-film transistors) having a crystallized silicon film and a gate-insulating film. First, an amorphous silicon film is formed on an insulating substrate. A first dielectric film is formed from silicon oxide on the amorphous silicon film. Holes are formed in the first dielectric film to selectively expose the surface of the amorphous silicon film. Nickel is introduced as the metal element into the amorphous silicon film. The film is heat-treated, thus forming crystallized silicon film. This crystalline silicon film is etched together with the silicon oxide film to form an active layer. The etched silicon oxide film acts as the aforementioned gate-insulating film. Even after the crystallization step, the silicon oxide film is left behind. As a result, the interface with the crystalline silicon film is kept in a good state.

REFERENCES:
patent: 5147826 (1992-09-01), Liu et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5693541 (1997-12-01), Yamazaki et al.
patent: 5744824 (1998-04-01), Kousai et al.
patent: 5756364 (1998-05-01), Tanaka et al.
patent: 5773846 (1998-06-01), Zhang et al.
patent: 5817549 (1998-10-01), Yamazaki
Kawazu, Japanese Journal of Applied Physics:vol. 29 No. 12 Dec. 1990 pp. 2698-2704 "Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation".
Kawazu, Japanese Journal of Applied Physics:vol. 29 No. 4 Apr. 1990 pp. 729-738 "Initial Stage of the Interfacial Reaction between Nickel and Hydrogenated Amorphous Silicon".
Hayzelden, Journal of Applied Physics: 73 (12), Jun. 15, 1993 pp. 8279-8289 "Silicide Formation and Silicide-Mediated Crystallization of Nickel Implanted Amorphous Silicon Thin Films".
Kuo, The Electrochemical Society Proceedings: vol. 94-35 pp. 116-122 "Thin Film Transistor Technologies", Apr. 1995.
Liu, Applied Physics Letters 55 (7) Aug. 14, 1989 pp. 660-662 "Selective area crystallization of amorphous silicon films by low-temperature rapid thermal annealing".
Cuane, Applied Surface Science 36 (1989) pp. 597-604 "Combined CW Laser and Furnace annealing of Amorphous Si and Ge in Contact With Some Metals", Jan. 1989.
Wolf, Silicon Processing for the VLSI Era, viol. 21986 pp. 273-275 "Passivation Layers", Jan. 1986.

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor devices by crystallizing amo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor devices by crystallizing amo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor devices by crystallizing amo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-661741