Method of fabricating semiconductor devices and integrated circu

Details Method of fabricating semiconductor devices and integrated circu Method of fabricating semiconductor devices and integrated circu

1993-12-17

1996-11-12

Quach, T. N.

Fishing, trapping, and vermin destroying

437 44, 437239, H01L 2131, H01L 21335

Patent

active

055739652

ABSTRACT:
The base layer of high quality spacers, such as those used on the sidewalls of the gate stack of submicron devices (e.g., MOSFETs, EPROMs), are formed as composite, multi-layered structures of silicon oxides or of silicon oxides and silicon nitride.

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