Method of fabricating semiconductor devices

Details Method of fabricating semiconductor devices Method of fabricating semiconductor devices

1982-05-21

1984-05-15

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156612, 156DIG64, 156DIG73, 156DIG80, 156DIG102, 148 15, 29576B, 29576T, 427 531, C30B 3300, H01L 21428

Patent

active

044486324

ABSTRACT:
A method of manufacturing a semiconductor device utilizing a monocrystalline silicon layer includes forming and irradiating a polycrystalline silicon layer to increase the grain size thereof, and forming an epitaxial layer thereover. Both layers are then irradiated to convert them into high quality monocrystalline silicon.

REFERENCES:
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 4147584 (1979-04-01), Garrison et al.
patent: 4152182 (1979-05-01), Rutz
patent: 4345967 (1982-08-01), Cook
M. W. Geis et al., Crystallographic Orientation of Silicon on an Amorphous Substrate Using an Artificial Surface-Relief Grating and Laser Crystallization, Jul. 1, 1979, Applied Physics Lett., vol. 35, No. 1, pp. 71-74.

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