Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-05-29
1998-10-13
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438668, 438635, 438647, 438657, H01L 21441
Patent
active
058211659
ABSTRACT:
The present invention provides a method of fabrication for semiconductor devices which enables a photolithography technique in a fabrication process to have a maximal effect on the transistor characteristics. Polysilicon film 16 and silicon nitride film 17 are formed to active transistor 11 and field shield isolation transistor 12, with isotropic etching of silicon nitride film 17 carried out using a resist pattern 20 which was patterned within the minimum processing width as the mask. Then, using the pattern of silicon nitride film 17 as a mask, thermal oxidation of polysilicon film 16 is carried out. Next, after eliminating silicon nitride film 17, anisotropic etching of polysilicon film 16 is carried out using silicon oxide film 21 as a mask, silicon oxide film 21 being formed by thermal oxidation of polysilicon film 16. In this way, a contact pad 22 formed of polysilicon film 16 is completed. As a result, the dimensions between polysilicon pads 22,22 is smaller than the minimum processing width for a photolithography technique by an amount equivalent to the amount of side etching of silicon nitride film 17 and the amount of oxidation in the horizontal direction of polysilicon film 16.
REFERENCES:
patent: 4214946 (1980-07-01), Forget et al.
patent: 4613402 (1986-09-01), Losee et al.
Everhart Caridad
Nippon Steel Semiconductor Corporation
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