Method of fabricating semiconductor device with a trench isolati

Details Method of fabricating semiconductor device with a trench isolati Method of fabricating semiconductor device with a trench isolati

1998-01-29

1999-08-24

Trinh, Michael

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438430, 438433, 438270, H01L 2176

Patent

active

059435895

ABSTRACT:
A trench is formed on the surface of a semiconductor substrate. An oxide film is then formed on the side wall portion and the bottom portion of the trench, ions are implanted at least in the side wall portion of the trench for preventing an impurity from passing through there. Thereafter the ion-implanted portion is subjected to a heat treatment, whereby an impurity passing-through preventing film is formed between the bulk of the semiconductor substrate and the oxide film.

REFERENCES:
patent: H204 (1987-02-01), Oh et al.
patent: 4523369 (1985-06-01), Nagakubo
patent: 5142640 (1992-08-01), Iwamatsu
patent: 5643822 (1997-07-01), Furukawa et al.
patent: 5780346 (1998-07-01), Arghavani et al.
patent: 5854131 (1998-12-01), Gardner et al.

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