Method of fabricating semiconductor device utilizing a GaAs sing

Details Method of fabricating semiconductor device utilizing a GaAs sing Method of fabricating semiconductor device utilizing a GaAs sing

1995-06-01

1998-03-31

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

117 17, 117 21, H01L 21301

Patent

active

057338051

ABSTRACT:
By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements inthe wafer. The difference between the maximum value and minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4.times.10.sup.-5, and the density of Si atoms contained in the GaAs single crystal is set to at most 1.times.10.sup.16 cm.sup.-3, whereby the characteristics of semiconductor elements whose parent matrial is the GaAs single crystal can be made uniform.

REFERENCES:
patent: 2908004 (1959-10-01), Levinson
patent: 3033660 (1962-05-01), Okkerse
patent: 3446603 (1969-05-01), Loiacono et al.
patent: 3833342 (1974-09-01), Holliday et al.
patent: 4299650 (1981-11-01), Bonner
patent: 4539067 (1985-09-01), Washizuka et al.
patent: 4544417 (1985-10-01), Clarke et al.
patent: 4586979 (1986-05-01), Katsumata et al.
patent: 4618396 (1986-10-01), Shimoda et al.
patent: 4637854 (1987-01-01), Fukuda et al.
patent: 4645560 (1987-02-01), Matsumoto et al.
patent: 4863554 (1989-09-01), Kawasaki et al.
Miyazawa et al, "Dislocations as the Origin of Threshold Voltage Scatterings for GaAs MESFET on LEC-Grown Semi-Ins. GaAs Substrate", IEEE Trans. on Elec. Dev., vol. ED-31, No. 8, Aug. 1984, pp. 1057-1061.
Matsuoko et al, "Uniformity Evaluation of MESFET's for GaAs LSI Fabrication", IEEE Trans. on Elec. Dev., vol. ED-31, No. 8, Aug. 1984, p. 1062.
Hunter et al, "Carbon in Semi-insulating, Liquid Encapsulated Czochralski GaAs", App. Phys. Lett., vol. 44, No. 1, Jan. 1984, pp.
S. Sze, "Physics of Semiconductor Devices", John Wiley & Sons, 1976, p. 33.
Fornari et al, "Dislocation-Free Silicon-Doped Gallium Arsenide Grown by LEC Procedure", Jour. Cryst. Growth, vol. 63, 1983, pp. 415-418.
Terashima, "Control of Growth Parameters for Obtaining Highly Uniform Large Diameter LEC GaAs", 5th Conf. on Semi-insulating III-V Materials, 1988 pp. 413-422.

Affiliated with

Also associated with

Rating

Method of fabricating semiconductor device utilizing a GaAs sing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating semiconductor device utilizing a GaAs sing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device utilizing a GaAs sing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-51428