Method of fabricating semiconductor device on SOI substrate

Details Method of fabricating semiconductor device on SOI substrate Method of fabricating semiconductor device on SOI substrate

1999-03-25

2000-12-12

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438311, 438800, H01L 2100

Patent

active

061597805

ABSTRACT:
Disclosed herein is a semiconductor device and a method of fabricating the same. The semiconductor device includes a SOI substrate comprising a handling wafer, a buried insulating layer and a silicon layer; a gate electrode formed on the silicon layer; a first junction region formed on the first portion of the silicon layer, wherein bottom of the first junction region is positioned at a selected depth from the surface of the first portion of the silicon layer; a second junction region of the second conductivity type, formed on the second portion of the silicon layer at a selected depth from the surface of the second portion of the silicon layer; an intermediate insulating layer formed on the overall surface of the SOI substrate including the gate electrode, and the first and second junction regions; a first conduction line formed on the intermediate insulating layer, an extending portion of the first conduction line being extended to the bottom of the first junction region through the intermediate insulating layer and the underlying first junction region; and a second conduction line formed on the intermediate insulating layer, an extending portion of the second conduction line being extended to the upper surface of the second junction region.

REFERENCES:
patent: 5034335 (1991-07-01), Widdershoven
patent: 5693959 (1997-12-01), Inoue et al.
patent: 5929490 (1999-07-01), Onishi
English translation of Abstract for JP8-172199 (Jul. 2, 1996).
English translation of Purpose and Constitution for JP62-274778 (Nov. 28, 1987).
English translation of Purpose and Constitution for JP62-76775 (Apr. 8, 1987).

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