Method of fabricating semiconductor device including...

Details Method of fabricating semiconductor device including... Method of fabricating semiconductor device including...

2006-12-07

2010-06-15

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S626000, C438S631000, C438S690000, C438S691000, C438S959000

Reexamination Certificate

active

07737038

ABSTRACT:
A method of fabricating a semiconductor device includes forming a conductive layer on an insulating layer having a plurality of trenches on a semiconductor substrate, such that the conductive layer fills in the plurality of trenches formed in the insulating layer, and calculating a target eddy current value to measure an end point using parameters of a pattern density and a depth of the trenches. The method further includes planarizing the conductive layer and measuring eddy current values on the conductive layer using an eddy current monitoring system, and stopping the planarization when the measured eddy current value reaches the target eddy current value to form a planarized conductive layer having a target height on the insulating layer.

REFERENCES:
patent: 6830504 (2004-12-01), Chen et al.
patent: 7016795 (2006-03-01), Swedek et al.
patent: 7024268 (2006-04-01), Bennett et al.
patent: 2002/0055192 (2002-05-01), Redeker et al.
patent: 2002/0164925 (2002-11-01), Swedek et al.
patent: 2007/0020918 (2007-01-01), Hirokawa et al.
patent: 2003-077919 (2003-03-01), None
patent: 1020050104961 (2005-11-01), None
English Abstract for Publication No. 2003-077919.
English Abstract for Publication No. 1020050104961.

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