Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-29
2005-03-29
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S701000, C257S623000
Reexamination Certificate
active
06872658
ABSTRACT:
A gate metal is formed in a film, the foregoing gate metal is partially etched per each TFT having a different property, and a gate electrode is fabricated. Specifically, a resist mask is fabricated by exposing a resist to light per each TFT having a different property which is required. A gate metal is etched per each TFT having a different property which is required using the foregoing resist mask. At this time, a gate metal covering a semiconductor active layer of a TFT except for the TFT during the time when the patterning of a gate electrode is performed is left as it is covered. The step of fabricating a gate electrode of each TFT may be performed under the conditions optimized in conformity with the required property.
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patent: 7-183540 (1995-07-01), None
English abstract re Japanese patent application No. JP 7-183540, published Jul. 21, 1995.
Arakawa Etsuko
Kato Kiyoshi
Kurokawa Yoshiyuki
Coleman W. David
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Semiconductor Energy Laboratory Co,. Ltd.
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