Method of fabricating semiconductor device and system of...

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...

Reexamination Certificate

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Reexamination Certificate

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06897166

ABSTRACT:
A method of fabricating a semiconductor device capable of obtaining a high-density laser beam necessary for crystallizing a semiconductor layer or activating an impurity while miniaturizing a lens group provided on the outlet of an optical fiber member is provided. This method of fabricating a semiconductor device comprises steps of connecting a laser oscillator oscillating a near infrared laser beam and an irradiation optical system with each other through an optical fiber member having a single core part and heating a semiconductor layer by irradiating the near infrared laser beam from the irradiation optical system.

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patent: 6498652 (2002-12-01), Varshneya et al.
patent: 6795460 (2004-09-01), Itoh
patent: 6844523 (2005-01-01), Yamazaki et al.
patent: 6-345415 (1994-12-01), None
patent: P2001-156017 (2001-06-01), None
patent: P2001-291666 (2001-10-01), None
patent: P2002-50576 (2002-02-01), None

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