Method of fabricating semiconductor device, and semiconductor de

Details Method of fabricating semiconductor device, and semiconductor de Method of fabricating semiconductor device, and semiconductor de

1999-02-17

2000-08-08

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438637, 438658, 438675, H01L 2147

Patent

active

061001902

ABSTRACT:
Wiring of the Dual-Damascene structure is formed without using the CMP method.
As shown in FIG. 1A, oxygen ions are implanted from an upper surface under the condition that the oxygen ions reach a position a little deeper than the thickness t1 of the copper film 11 on the SiO.sub.2 layer 2. Due to the foregoing, as shown in FIG. 1B, the copper film 11 on the SiO.sub.2 layer 2 and the copper films on the upper portions of the first wiring section 18 and the second wiring section 19 are oxidized, and the oxidized layer 13 is formed. Since the dielectric constant of copper oxide is high, the first wiring section 18 and the second wiring section 19 are insulated from each other. Therefore, it is possible to obtain a highly reliable wiring structure easily.

REFERENCES:
patent: 5933761 (1998-06-01), Lee
"Making the Move to Dual Damascene Processing", Semiconductor International, Aug. 1997, pp. 79-82.

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