Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-03-18
2009-06-09
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S486000
Reexamination Certificate
active
07544550
ABSTRACT:
A semiconductor device and method of fabricating the same are provided. The method includes: depositing a silicon layer containing amorphous silicon on a substrate; defining source and drain regions by doping the silicon layer with impurity ions; crystallizing the amorphous silicon by an annealing process under an atmosphere of H2O at a predetermined temperature, and at the same time activating the impurity ions to form a semiconductor layer; forming a gate insulating layer over the entire surface of the substrate having the semiconductor layer; and forming a gate electrode on the gate insulating layer in correspondence with a channel region of the semiconductor layer, in which the annealing process is simplified by crystallizing the polycrystalline silicon and at the same time activating the impurity ions, thereby preventing the substrate from being deformed due to high temperature during the annealing process.
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Kakkad Ramesh
Kim Yong-Seog
Bushnell , Esq. Robert E.
Mulpuri Savitri
Samsung Mobile Display Co., Ltd.
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