Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-10-28
2000-08-22
Thomas, Tom
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438643, 438644, 438645, 438648, 438652, 438653, 438654, 438656, 257748, 257751, 257752, 257753, 257758, 257763, 257764, 257770, H01L 21441, H01L 214763, H01L 2352, H01L 2940
Patent
active
061071900
ABSTRACT:
There is provided a method of fabricating a semiconductor including the steps, in this order, of (a) forming an interlayer insulating film on a semiconductor substrate, (b) forming a first TiN film on the interlayer insulating film by sputtering, (c) forming a hole throughout the interlayer insulating film to thereby cause the semiconductor substrate to appear, (d) forming a second TiN film over the first TiN film by chemical vapor deposition to thereby fill the hole with the second TiN film, and (e) removing the first and second TiN films except TiN filling the hole therewith. When a Ti or TiN film having a thickness sufficient to fill a contact hole or a through-hole therewith is to be formed by CVD even at low temperature, the this method prevents the Ti or TiN film from being cracked or peeled off.
REFERENCES:
patent: 4820611 (1989-04-01), Arnold, III et al.
patent: 5286608 (1994-02-01), Koh
patent: 5306952 (1994-04-01), Matsuura et al.
patent: 5399237 (1995-03-01), Keswick et al.
patent: 5534730 (1996-07-01), Mori et al.
patent: 5540820 (1996-07-01), Terakado et al.
patent: 5571751 (1996-11-01), Chung
patent: 5573978 (1996-11-01), Cho
patent: 5627102 (1997-05-01), Shinriki et al.
patent: 5744395 (1998-04-01), Shue et al.
patent: 5759915 (1998-06-01), Matsunaga et al.
patent: 5783485 (1998-07-01), Ong et al.
patent: 5841179 (1998-11-01), Pramanick et al.
patent: 5882999 (1999-03-01), Anderson et al.
Joseph Hillman et al., Solid State Technology, Integrated CVD Titanium and Titanium Nitride Processes for Sub-0.5-.mu.m Metallization, Jul. 1995, pp. 147, 148, 150, and 152.
Taguwa Tetsuya
Yamada Yoshiaki
NEC Corporation
Souw Bernard E.
Thomas Tom
LandOfFree
Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-580647