Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2008-04-29
2008-04-29
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
Reexamination Certificate
active
07364978
ABSTRACT:
There is provided a method of fabricating semiconductor devices that allows ion implantation to be performed at high temperature with ions accelerated with high energy to help to introduce dopant in a semiconductor substrate, in particular a SiC semiconductor substrate, at a selected region to sufficient depth. To achieve this the method includes the steps of: providing the semiconductor substrate at a surface thereof with a mask layer including a polyimide resin film, or a SiO2film and a thin metal film; and introducing dopant ions.
REFERENCES:
patent: 5628871 (1997-05-01), Shinagawa
patent: 6294444 (2001-09-01), Ueno
patent: 6458683 (2002-10-01), Lee
patent: 6670688 (2003-12-01), Satoh et al.
patent: 6700631 (2004-03-01), Inoue et al.
patent: 6803243 (2004-10-01), Slater et al.
patent: 6885389 (2005-04-01), Inoue et al.
patent: 7026650 (2006-04-01), Ryu et al.
patent: 7195996 (2007-03-01), Arai et al.
patent: 2001/0046757 (2001-11-01), Takahashi et al.
patent: 2002/0179910 (2002-12-01), Slater, Jr.
patent: 2003/0040136 (2003-02-01), Eriksen et al.
patent: 2003/0190820 (2003-10-01), Hill et al.
patent: 2003/0194573 (2003-10-01), Itoh et al.
patent: 56-013722 (1981-02-01), None
patent: 61-069174 (1986-04-01), None
patent: 04-002120 (1992-01-01), None
patent: 10-256173 (1998-09-01), None
patent: 2001-332508 (2001-11-01), None
Power Device, Power IC Handbook, edited by the Institute of Electrical Engineers of Japan, High Performance and High Function Power Device and Power IC Investigation and Research Committee, Corona Publishing Co., Ltd., Jul. 1996, pp. 38-41 (with partial English translation).
Fujikawa Kazuhiro
Harada Shin
Fasse W. F.
Fasse W. G.
Le Thao P.
Sumitomo Electric Industries Ltd.
LandOfFree
Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2790024