Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-01-29
2008-01-29
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S627000, C438S628000, C438S653000, C438S626000
Reexamination Certificate
active
07323419
ABSTRACT:
A method of fabricating a semiconductor device including a high-k dielectric for as a gate insulating layer is provided. The method includes forming a high-k dielectric layer and a conductive layer on a substrate, dry etching a portion of the conductive layer, performing a process to increase a wet etch rate of a remaining portion of the conductive layer, and forming a conductive layer pattern by wet etching the remaining portion of the conductive layer after performing the plasma process or the ion implantation. The process to increase the wet etch rate of the conductive layer including a plasma process and/or an ion implantation on the remaining portion of the conductive layer.
REFERENCES:
patent: 4381215 (1983-04-01), Reynolds et al.
patent: 6208004 (2001-03-01), Cunningham
patent: 6534223 (2003-03-01), Yang
patent: 6642132 (2003-11-01), Cho et al.
patent: 2004/0113171 (2004-06-01), Chiu et al.
patent: 2004-247573 (2004-09-01), None
patent: 10-2001-0018819 (2001-03-01), None
Han Sung-kee
Jung Hyung-suk
Kim Min-joo
Lee Jong-ho
Park Jae-eon
George Patricia A.
Lee & Morse P.C.
Norton Nadine G.
Samsung Electronics Co,. Ltd.
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