Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2011-08-30

2011-08-30

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C438S430000, C257SE21546

Reexamination Certificate

active

08008163

ABSTRACT:
A method of fabricating a semiconductor device, the method including forming a buffer oxide layer in a first region and a second region of a semiconductor substrate; forming a plurality of first preliminary mask patterns on the buffer oxide layer in the first region; forming a plurality of second preliminary mask patterns between every two adjacent first preliminary mask patterns from among the plurality of first preliminary mask patterns, respectively; forming a plurality of first mask patterns and a plurality of second mask patterns by trimming the plurality of first preliminary mask patterns and the plurality of second preliminary mask patterns; forming a plurality of first active region mask patterns for exposing the semiconductor substrate; defining a plurality of active regions in the semiconductor substrate by forming a trench including a plurality of first trench spaces having same width as the first space and a plurality of second trench spaces under the second space in the first region; and forming a first liner layer on the semiconductor substrate having the trench therein such that the plurality of first trench spaces are completely filled with the first liner layer.

REFERENCES:
patent: 6383907 (2002-05-01), Hasegawa et al.
patent: 6596607 (2003-07-01), Ahn
patent: 7235459 (2007-06-01), Sandhu
patent: 7563689 (2009-07-01), Hong
patent: 7855148 (2010-12-01), Olson
patent: 2006/0240636 (2006-10-01), Ryu et al.
patent: 2007/0235785 (2007-10-01), Kahng et al.
patent: 2009/0029523 (2009-01-01), Seo et al.
patent: 2009/0269898 (2009-10-01), Kim
patent: 10-0443126 (2004-02-01), None
patent: 10-0801739 (2008-01-01), None

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