Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

2011-04-19

2011-04-19

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S680000, C438S770000, C438S506000, C257SE21170, C257SE21043, C257SE21077, C257SE21226, C257SE21229, C257SE21278, C257SE21320, C257SE21324

Reexamination Certificate

active

07927988

ABSTRACT:
Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.

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S. Nakashima et al., “Investigations on High-Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers,” J. Electrochem. Soc., Jan. 1996, pp. 244-251, vol. 143, No. 1.

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