Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1996-12-31

2000-09-26

Fahmy, Wael

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438301, 438306, 438530, 438279, H01L 21425

Patent

active

061241873

ABSTRACT:
In a method of fabricating a semiconductor device having an N.sup.+ -type layer or P.sup.+ -type layer containing an impurity in a concentration of 1.times.10.sup.19 /cm.sup.3 or more, or a semiconductor device having a silicon based gate electrode structure containing an impurity, the final one of heat treatments each exerting an effect to an active state of the impurity is a high rapid thermal anneal, to thereby suppress an increase in resistance of the N.sup.+ -type layer or P.sup.+ -type layer as a diffusion layer or improve depletion of a poly-Si based gate electrode without occurrence of variations in threshold voltage.

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