Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1998-06-25

2000-06-27

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438682, 438683, H01L 2144, H01L 214763

Patent

active

060806486

ABSTRACT:
Disclosed is a method of fabricating a semiconductor device, including the steps of: preparing a silicon substrate on which a gate insulating film and a gate electrode composed of a polycrystalline silicon film and an insulating film are sequentially formed; forming side walls from a material having an etching selectivity to the insulating film on both sides of the gate electrode; forming a resist film on the silicon substrate so as to cover the gate electrode, and etching-back the resist film until the resist film remains on the silicon substrate except for the gate electrode to expose an upper portion of the gate electrode; selectively removing the insulating film on the gate electrode using the resist film and the side walls as a mask, and removing the resist film; and forming a refractory metal film on the silicon substrate so as to cover the gate electrode, and forming metal silicide films on the gate electrode and the silicon substrate by silicidizing, through heat-treatment, the refractory metal film with the polycrystalline silicon film of the gate electrode and with the silicon substrate.

REFERENCES:
patent: 5840609 (1998-11-01), Hyeon et al.
patent: 5946573 (1999-08-01), Hsu
patent: 5966597 (1999-10-01), Wright

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