Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1996-11-15

1999-03-30

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438589, 438591, 438167, H01L 21338

Patent

active

058888594

ABSTRACT:
A method of making a semiconductor device includes forming a recess in a compound semiconductor substrate using a patterned insulating film on a surface of the substrate, implanting dopant ions at the bottom of the recess to form a channel region, and depositing a refractory metal film. The refractory metal film is etched, using a resist pattern, to form a gate electrode and additional dopant ions are implanted to form relatively highly doped regions intersecting the channel region. Very highly doped regions are formed my implantation, after removing the insulating film, using the gate electrode and remainder of the resist mask as an implantation mask. After stripping the resist, annealing to activate the implanted ions, and depositing a passivating film on the substrate and gate electrode, source and drain electrodes are formed. The field effect transistor thus produced has a high breakdown voltage, improved reliability, a highly controlled pinch-off voltage, and improved transconductance and operating speed.

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